Publication number: 08316540
Date of publication of application: 29.11.1996
Application number: 07117045
Date of filing: 16.05.1995
Applicant: TAKAMI TOMOHIDE, INO SHOZO
Inventor: TAKAMI TOMOHIDE, INO SHOZO
THIN FILM FORMING METHOD AND DEVICE
Abstract:
PURPOSE: To enhance the surface of a substrate or the like in probability
of oxidative reaction by a method wherein an oxide film is formed on the surface
of the substrate or the like by irradiating the surface of the substrate or
the like with an excited oxygen atomic beam in a vacuum chamber.
CONSTITUTION: Superexcited oxygen atoms are defined as excited atoms which
are excited up to a higher energy state of different orbits. A superexcited oxygen
atom forming device 1 is equipped with a vacuum chamber to serve as a source of
superexcited oxygen atom beam, helium gas and oxygen molecules are mixed together,
and a discharge is made to occur in the mixed gas to generate superexcited oxygen
atoms. Superexcited oxygen atoms are spouted out from a nozzle as a beam. A superexcited
oxygen atom beam is introduced into an oxide thin film forming device 2 through
a differential exhaust device 3 to irradiate the surface of a substrate 6 for
oxidation to enable oxidative reaction to take place. The surface of the substrate
6 approximates to 1 on probability of oxidative reaction, so that no residual
oxygen gas is present around the surface of the substrate 6. By this setup, an
adverse effect caused by residual gas of oxygen or nitrogen monoxide is eliminated,
so that an oxide thin film of high quality can be formed.