Publication number: 2001-328898
Date of publication of application: 27.11.2001
Application number: 2000-145467
Applicant: JAPAN SCIENCE & TECHNOLOGY CORP
Date of filing: 17.05.2000
Inventor: KUSUNOKI ISAO, TAKAMI TOMOHIDE, and ABE IZUMO

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EPITAXIAL GROWTH METHOD OF CRYSTALLINE SILICON NITRIDE FILM AND EPITAXIAL CRYSTALLINE SILICON NITRIDE FILM

Abstract:

PROBLEM TO BE SOLVED: To carry out epitaxial growth of crystalline silicon nitride film on the surface of Si single crystal.
SOLUTION: This silicon nitride film is formed by irradiating silicon single crystal (100) surface with N2+ ion accelerated to 500 eV in a vacuum. Crystal island 1, 1' is a crystal (hexagonal system, a=0.776 nm and c=0.562 nm) of α-Si3N4 and c-axis of the crystal island 1 extends along Si[011] direction and a-axis thereof extends along Si[100] direction. The crystal island 1' has a relation obtained by rotating the crystal island 1 by 90 degree around the c-axis and c-axis of the crystal island 1' extends along Si[011] direction and a axis thereof extends along Si[01-1] direction. The epitaxial orientations of the crystal island 1 and 1' are each (100) <001> α-Si3N4 || (100) <011>Si and (120) <001> α-Si3N4 || (100)<011>Si.